Nanoscale Carrier Multiplication Mapping in a Si Diode | Zendy

Corentin Durand | Zendy; Pierre Capiod | Zendy; Maxime Berthe | Zendy; Jean-Philippe Nys | Zendy; Christophe Krzeminski | Zendy; Didier Stiévenard | Zendy; Christophe Delerue | Zendy; B. Grandidier | Zendy

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Nanoscale Carrier Multiplication Mapping in a Si Diode

Author(s) -

Corentin Durand,

Pierre Capiod,

Maxime Berthe,

Jean-Philippe Nys,

Christophe Krzeminski,

Didier Stiévenard,

Christophe Delerue,

B. Grandidier

Publication year - 2014

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl5022255

Subject(s) - scanning tunneling microscope , diode , materials science , silicon , quantum tunnelling , electron , optoelectronics , electron beam induced current , excited state , yield (engineering) , impact ionization , ionization , nanoscopic scale , diffusion , semiconductor , atomic physics , chemistry , nanotechnology , physics , ion , organic chemistry , quantum mechanics , metallurgy , thermodynamics

Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency. Atomically well-ordered areas of the p-n junction surface sustain the highest CM rate, demonstrating the key role of the surface in reaching high yield.

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