Au-Seeded Growth of Vertical and in-Plane III–V Nanowires on Graphite Substrates | Zendy

Jesper Wallentin | Zendy; Dominik Kriegner | Zendy; J. Stangl | Zendy; Magnus T. Borgström | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Au-Seeded Growth of Vertical and in-Plane III–V Nanowires on Graphite Substrates

Author(s) -

Jesper Wallentin,

Dominik Kriegner,

J. Stangl,

Magnus T. Borgström

Publication year - 2014

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl403411w

Subject(s) - nanowire , materials science , graphite , graphene , nanotechnology , substrate (aquarium) , dopant , vapor–liquid–solid method , optoelectronics , yield (engineering) , seeding , doping , composite material , oceanography , aerospace engineering , engineering , geology

Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and GaAs was strongly improved by supplying the p-dopant DEZn before nanowire growth but not by supplying H2S or HCl. In-plane GaAs and GaP nanowire growth exhibited an unexpected behavior, where the seed particles seemingly reflected on the side facets of other nanowires. These results pave the way for vertical and in-plane hybrid graphene- nanowire devices.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research