Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires | Zendy

Patrick Parkinson | Zendy; Christopher M. Dodson | Zendy; Hannah J. Joyce | Zendy; Kris A. Bertness | Zendy; Norman A. Sanford | Zendy; Laura M. Herz | Zendy; Michael B. Johnston | Zendy

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Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires

Author(s) -

Patrick Parkinson,

Christopher M. Dodson,

Hannah J. Joyce,

Kris A. Bertness,

Norman A. Sanford,

Laura M. Herz,

Michael B. Johnston

Publication year - 2012

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl301898m

Subject(s) - nanowire , materials science , optoelectronics , charge carrier , charge (physics) , carrier lifetime , electron mobility , gallium nitride , nanotechnology , engineering physics , silicon , physics , layer (electronics) , quantum mechanics

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

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