Open AccessUnit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
Author(s) -
Dominik Kriegner,
Christian Panse,
Bernhard Mandl,
Kimberly A. Dick,
Mario Keplinger,
Johan Persson,
Philippe Caroff,
Daniele Ercolani,
L. Sorba,
F. Bechstedt,
J. Stangl,
Günther Bauer
Publication year - 2011
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/nl1041512
Subject(s) - wurtzite crystal structure , stacking , transmission electron microscopy , materials science , condensed matter physics , hexagonal crystal system , lattice (music) , crystallography , crystal structure , primitive cell , nanowire , diffraction , semiconductor , hexagonal lattice , density functional theory , nanotechnology , chemistry , optics , optoelectronics , physics , computational chemistry , organic chemistry , antiferromagnetism , acoustics
The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
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