Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires | Zendy

Benjamin Jacobs | Zendy; Virginia M. Ayres | Zendy; Mihail P. Petkov | Zendy; Joshua B. Halpern | Zendy; Maoqi He | Zendy; Andrew Baczewski | Zendy; Kaylee McElroy | Zendy; M.A. Crimp | Zendy; Jiaming Zhang | Zendy; Harry Shaw | Zendy

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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires

Author(s) -

Benjamin Jacobs,

Virginia M. Ayres,

Mihail P. Petkov,

Joshua B. Halpern,

Maoqi He,

Andrew Baczewski,

Kaylee McElroy,

M.A. Crimp,

Jiaming Zhang,

Harry Shaw

Publication year - 2007

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl062871y

Subject(s) - wurtzite crystal structure , cathodoluminescence , zinc , nanowire , materials science , gallium nitride , transmission electron microscopy , spectroscopy , wide bandgap semiconductor , band gap , crystallography , nanotechnology , optoelectronics , chemistry , physics , metallurgy , layer (electronics) , quantum mechanics , luminescence

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

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