Metal-Induced Assembly of a Semiconductor Island Lattice: Ge Truncated Pyramids on Au-Patterned Si | Zendy

Jeremy T. Robinson | Zendy; J. Alexander Liddle | Zendy; Andrew M. Minor | Zendy; Velimir Radmilović | Zendy; Di Yi | Zendy; P. Alex Greaney | Zendy; Kim Long | Zendy; D. C. Chrzan | Zendy; O. D. Dubón | Zendy

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Metal-Induced Assembly of a Semiconductor Island Lattice: Ge Truncated Pyramids on Au-Patterned Si

Author(s) -

Jeremy T. Robinson,

J. Alexander Liddle,

Andrew M. Minor,

Velimir Radmilović,

Di Yi,

P. Alex Greaney,

Kim Long,

D. C. Chrzan,

O. D. Dubón

Publication year - 2005

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/nl051719d

Subject(s) - nucleation , quantum dot , germanium , lattice (music) , semiconductor , materials science , condensed matter physics , metal , nanotechnology , surface diffusion , diffusion , self assembly , crystallography , optoelectronics , silicon , chemistry , physics , organic chemistry , adsorption , acoustics , metallurgy , thermodynamics

We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning to control nucleation and growth. In the Ge on Si system, a square array of submicron Au dots on the Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice. Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the observed ordering and establishes general criteria for the broader applicability of such a directed assembly process to quantum dot ordering.

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