Metal Residues in Semiconducting Polymers: Impact on the Performance of Organic Electronic Devices
Author(s) -
Özlem Usluer,
Mamatimin Abbas,
Guillaume Wantz,
Laurence Vignau,
Lionel Hirsch,
Eftychia Grana,
Cyril Brochon,
Éric Cloutet,
Georges Hadziioannou
Publication year - 2014
Publication title -
acs macro letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.966
H-Index - 92
ISSN - 2161-1653
DOI - 10.1021/mz500590d
Subject(s) - materials science , polymer , organic solar cell , extraction (chemistry) , field effect transistor , impurity , organic semiconductor , metal , chemical engineering , acceptor , inorganic chemistry , transistor , organic chemistry , optoelectronics , chemistry , composite material , metallurgy , physics , quantum mechanics , voltage , engineering , condensed matter physics
International audienceThe effect of impurities on the optoelectronic and charge transport properties of semiconducting polymers: was investigated through the performance of organic photovoltaics(OPVs) and organic field effect transistors (OFETs), respectively. All Model representative semiconducting polymer, i.e., poly(3-hexylthiophene) (P3HT), was synthesized and purified using different methods such as precipitation, metals' complexation, and Soxhlet extraction. After the purification processes, each fraction was analyzed to determine its composition in metals (impurities) by various techniques. OFETs and, OPVs fabricated from these purified polymer fractions were found to show different charge carrier properties and photovoltaic behaviors. The purest fraction which was obtained after Soxhlet extraction complemented by metals' complexation with the help of ethylenediamine and I5-crown-5 ether showed the best performance in both OPVs and OFETs
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