Stoichiometry-Dependent Chemical Activity of Supported MgO(100) Films
Author(s) -
Grégory Cabailh,
Rémi Lazzari,
Hervé Cruguel,
Jacques Jupille,
Letizia Savio,
Marco Smerieri,
A. Orzelli,
L. Vattuone,
M. Rocca
Publication year - 2011
Publication title -
the journal of physical chemistry a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.756
H-Index - 235
eISSN - 1520-5215
pISSN - 1089-5639
DOI - 10.1021/jp200069u
Subject(s) - stoichiometry , partial pressure , monolayer , scanning tunneling microscope , oxygen , chemical vapor deposition , adsorption , analytical chemistry (journal) , water vapor , materials science , chemistry , nanotechnology , environmental chemistry , organic chemistry
Here, we show that the stoichiometry and, consequently, the chemical activity toward hydroxylation of MgO(100) films grown by reactive deposition on Ag(100) strongly depend on the O(2) partial pressure during film growth. Oxygen-deficient films undergo dramatic relative oxygen uptake either by exposure to a partial pressure of water vapor or by aging in vacuum for a sufficiently long time. Conversely, on stoichiometric monolayer MgO islands, photoemission analysis of the O 1s level and scanning tunneling microscopy images are consistent with the prediction that dissociative adsorption of water occurs only at the borders of the islands.
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