Metal−Molecule Schottky Junction Effects in Surface Enhanced Raman Scattering | Zendy

Manas Ranjan Gartia | Zendy; Tiziana C. Bond | Zendy; Gang Logan Liu | Zendy

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Metal−Molecule Schottky Junction Effects in Surface Enhanced Raman Scattering

Author(s) -

Manas Ranjan Gartia,

Tiziana C. Bond,

Gang Logan Liu

Publication year - 2010

Publication title -

the journal of physical chemistry a

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.756

H-Index - 235

eISSN - 1520-5215

pISSN - 1089-5639

DOI - 10.1021/jp1065083

Subject(s) - raman scattering , raman spectroscopy , schottky barrier , electric field , materials science , molecule , metal , optoelectronics , molecular physics , chemical physics , nanotechnology , chemistry , optics , physics , organic chemistry , diode , quantum mechanics , metallurgy

We propose a complementary interpretation of the mechanism responsible for the strong enhancement observed in surface enhanced raman scattering (SERS). The effect of a strong static local electric field due to the Schottky barrier at the metal-molecule junction on SERS is systematically investigated. The study provides a viable explanation to the low repeatability of SERS experiments as well as the Raman peak shifts as observed in SERS and raw Raman spectra. It was found that a strong electrostatic built-in field at the metal-molecule junction along specific orientations can result in 2-4 more orders of enhancement in SERS.

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