Atomic and Electronic Structure of New Hollow-Based Symmetric Families of Silicon Nanoclusters
Author(s) -
Павел В. Аврамов,
Dmitri G. Fedorov,
Павел Б. Сорокин,
Л. А. Чернозатонский,
Mark S. Gordon
Publication year - 2007
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/jp0777216
Subject(s) - nanoclusters , fullerene , silicon , electronic structure , materials science , quantum dot , nanotechnology , chemical physics , symmetry (geometry) , condensed matter physics , physics , optoelectronics , quantum mechanics , geometry , mathematics
We have systematically constructed a set of stable silicon nanocluster families with large arbitrary fullerene-type hollows inside. In addition, conglomerate structures are designed by connecting the nanoclusters through pentagonal and hexagonal junctions. The atomic and electronic structure of the proposed objects is investigated using the semiempirical quantum-mechanical method. It is shown that within each family the band gap and the stability are inversely proportional to the particle effective size. The clusters inherit a wide variety of structural and symmetry properties from their parent silicon fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of nanomaterials with tunable electronic properties.
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