A Novel Photoconductive PVK/SiO2 Interpenetrated Network Prepared by the Sol−Gel Process | Zendy

G. Ramos | Zendy; Tomás Belenguer | Zendy; Eusebio Bernabéu | Zendy; Francisco del Monte | Zendy; David Lévy | Zendy

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A Novel Photoconductive PVK/SiO₂ Interpenetrated Network Prepared by the Sol−Gel Process

Author(s) -

G. Ramos,

Tomás Belenguer,

Eusebio Bernabéu,

Francisco del Monte,

David Lévy

Publication year - 2002

Publication title -

the journal of physical chemistry b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.864

H-Index - 392

eISSN - 1520-6106

pISSN - 1520-5207

DOI - 10.1021/jp026759+

Subject(s) - photoconductivity , materials science , sol gel , photosensitivity , hybrid material , chemical engineering , polymer chemistry , optoelectronics , nanotechnology , engineering

In this work, we describe the preparation of a novel photoconductive sol−gel material based on an organic/inorganic interpenetrating network (IPN). The composition of the sol−gel photoconductive material mimics the well-known polymeric one based on poly(N-vinylcarbazole) (PVK) as the charge-transporting matrix and 2,4,7-trinitro-9-fluorenone (TNF) as the sensitizer. The resulting photoconductive material (PVK/SiO_2 IPN) shows a photosensitivity of 10^-11 cm/(Ω W) in range to that reported for some analogue polymeric compounds and the highest ever reported for hybrid sol−gel materials

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