A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior
Author(s) -
Jason F. Khoury,
Alexander J. E. Rettie,
Mojammel A. Khan,
N. Ghimire,
Iñigo Robredo,
Jonathan E. Pfluger,
Koushik Pal,
Chris Wolverton,
Aitor Bergara,
J. S. Jiang,
Leslie M. Schoop,
Maia G. Vergniory,
J. F. Mitchell,
Duck Young Chung,
Mercouri G. Kanatzidis
Publication year - 2019
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/jacs.9b10147
Subject(s) - semimetal , magnetoresistance , dirac (video compression format) , condensed matter physics , brillouin zone , chemistry , quasiparticle , electronic structure , electronic band structure , topology (electrical circuits) , physics , band gap , magnetic field , quantum mechanics , superconductivity , mathematics , combinatorics , neutrino
Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir 2 In 8 S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the Γ -Z direction of the Brillouin zone. We further show that Ir 2 In 8 S has a high electron carrier mobility of ∼10 000 cm 2 /(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir 2 In 8 S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.
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