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Stable Scaffolds for Reacting Si Nanowires with Further Organic Functionalities while Preserving Si−C Passivation of Surface Sites
Author(s) -
Ossama Assad,
Sreenivasa Reddy Puniredd,
Thomas Stelzner,
Silke Christiansen,
Hossam Haick
Publication year - 2008
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/ja807888k
Subject(s) - chemistry , passivation , surface modification , nanowire , covalent bond , nanotechnology , chemical engineering , combinatorial chemistry , polymer chemistry , organic chemistry , layer (electronics) , materials science , engineering
We report on Si NWs modified by covalent scaffolds, via SiC bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH(3)CHCHSi NWs exhibit superior oxidation resistance over Si NWs that are modified with CH(3) or CH(3)CC functionalities, which give nearly full coverage of the Si atop site too.

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