Visualizing Individual Carbon Nanotubes with Optical Microscopy
Author(s) -
Michael Novák,
Sumedh P. Surwade,
Jason Prokop,
Kirill I. Bolotin,
James Hone,
Louis E. Brus,
Colin Nuckolls,
Haitao Liu
Publication year - 2014
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/ja503821s
Subject(s) - carbon nanotube , trench , wafer , optical microscope , etching (microfabrication) , chemistry , nanotechnology , raman spectroscopy , microscopy , microscope , nanometre , throughput , characterization (materials science) , raman microscope , silicon , carbon fibers , optoelectronics , layer (electronics) , optics , materials science , raman scattering , scanning electron microscope , composite material , telecommunications , physics , organic chemistry , computer science , composite number , wireless
This paper reports a high-throughput, label-free technique to visualize individual carbon nanotubes (CNTs) on a silicon wafer using a conventional optical microscope. We show that individual CNTs can locally enhance the rate of vapor-phase HF etching of SiO2 to produce a SiO2 trench that is several to several tens of nanometers in depth. The trench is visible under an optical microscope due to a change in the optical interference in the SiO2 layer, allowing the location of an individual CNT to be determined. With this technique, we demonstrate high-throughput Raman characterization and reactivity studies on individual CNTs.
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