Structural Characterization of a Pentacene Monolayer on an Amorphous SiO2 Substrate with Grazing Incidence X-ray Diffraction
Author(s) -
Sandra E. Fritz,
Stephen M. Martin,
C. Daniel Frisbie,
Michael D. Ward,
Michael F. Toney
Publication year - 2004
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/ja049726b
Subject(s) - pentacene , monolayer , amorphous solid , dielectric , organic semiconductor , thin film transistor , chemistry , substrate (aquarium) , crystallography , diffraction , semiconductor , x ray crystallography , layer (electronics) , materials science , optoelectronics , optics , nanotechnology , organic chemistry , oceanography , physics , geology
Grazing incidence X-ray diffraction reveals that a pentacene monolayer, grown on an amorphous SiO2 substrate that is commonly used as a dielectric layer in organic thin film transistors (OTFTs), is crystalline. A preliminary energy-minimized model of the monolayer, based on the GIXD data, reveals that the pentacene molecules adopt a herringbone arrangement with their long axes tilted slightly from the substrate normal. Although this arrangement resembles the general packing features of the (001) layer in single crystals of bulk pentacene, the monolayer lattice parameters and crystal structure differ from those of the bulk. Because carrier transport in pentacene OTFTs is presumed to occur in the semiconductor layers near the dielectric interface, the discovery of a crystalline monolayer structure on amorphous SiO2 has important implications for transport in OTFTs.
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