High Mobility of Dithiophene-Tetrathiafulvalene Single-Crystal Organic Field Effect Transistors
Author(s) -
Marta MasTorrent,
M. Durkut,
P. Hadley,
Xavi Ribas,
Concepció Rovira
Publication year - 2004
Publication title -
journal of the american chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 7.115
H-Index - 612
eISSN - 1520-5126
pISSN - 0002-7863
DOI - 10.1021/ja0393933
Subject(s) - tetrathiafulvalene , pentacene , organic semiconductor , chemistry , semiconductor , field effect transistor , substrate (aquarium) , optoelectronics , transistor , crystal (programming language) , single crystal , drop (telecommunication) , silicon , organic field effect transistor , electron mobility , electrode , thin film transistor , crystallography , organic chemistry , materials science , voltage , molecule , oceanography , computer science , telecommunications , quantum mechanics , programming language , physics , geology
Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 x 105 was obtained for this device.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom