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Chemical Pressure and Rare-Earth Orbital Contributions in Mixed Rare-Earth Silicides La5–xYxSi4 (0 ≤ x ≤ 5)
Author(s) -
Hui Wang,
Fei Wang,
K.M. Jones,
Gordon J. Miller
Publication year - 2011
Publication title -
inorganic chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.348
H-Index - 233
eISSN - 1520-510X
pISSN - 0020-1669
DOI - 10.1021/ic201840q
Subject(s) - tetragonal crystal system , orthorhombic crystal system , monoclinic crystal system , crystallography , chemistry , crystal structure , space group , electronic structure , x ray crystallography , diffraction , physics , computational chemistry , optics
A crystallographic study and theoretical analysis of the structural and La/Y site preferences in the La(5-x)Y(x)Si(4) (0 ≤ x ≤ 5) series prepared by high-temperature methods is presented. At room temperature, La-rich La(5-x)Y(x)Si(4) phases with x ≤ 3.0 exhibit the tetragonal Zr(5)Si(4)-type structure (space group P4(1)2(1)2, Z = 4, Pearson symbol tP36), which contains only Si-Si dimers. On the other hand, Y-rich phases with x = 4.0 and 4.5 adopt the orthorhombic Gd(5)Si(4)-type structure (space group Pnma, Z = 4, Pearson symbol oP36), also with Si-Si dimers, whereas Y(5)Si(4) forms the monoclinic Gd(5)Si(2)Ge(2) structure (space group P2(1)/c, Z = 4, Pearson symbol mP36), which exhibits 50% "broken" Si-Si dimers. Local and long-range structural relationships among the tetragonal, orthorhombic, and monoclinic structures are discussed. Refinements from single crystal X-ray diffraction studies of the three independent sites for La or Y atoms in the asymmetric unit reveal partial mixing of these elements, with clearly different preferences for these two elements. First-principles electronic structure calculations, used to investigate the La/Y site preferences and structural trends in the La(5-x)Y(x)Si(4) series, indicate that long- and short-range structural features are controlled largely by atomic sizes. La 5d and Y 4d orbitals, however, generate distinct, yet subtle effects on the electronic density of states curves, and influence characteristics of Si-Si bonding in these phases.

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