Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe4N/CoN Bilayers | Zendy

Zirun Li | Zendy; Wenbo Mi | Zendy; Xiaocha Wang | Zendy; Xixiang Zhang | Zendy

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Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe₄N/CoN Bilayers

Author(s) -

Zirun Li,

Wenbo Mi,

Xiaocha Wang,

Xixiang Zhang

Publication year - 2015

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/am509173r

Subject(s) - materials science , magnetoresistance , condensed matter physics , epitaxy , coupling (piping) , anisotropy , exchange bias , nanotechnology , magnetic anisotropy , composite material , layer (electronics) , magnetic field , magnetization , optics , physics , quantum mechanics

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ'-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ'-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ'-Fe4N layer and interfacial spin scattering.

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