Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters | Zendy

Javier Palomino | Zendy; Deepak Varshney | Zendy; O. Resto | Zendy; Brad R. Weiner | Zendy; Gerardo Morell | Zendy

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Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

Author(s) -

Javier Palomino,

Deepak Varshney,

O. Resto,

Brad R. Weiner,

Gerardo Morell

Publication year - 2014

Publication title -

acs applied materials and interfaces

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/am503221t

Subject(s) - materials science , diamond , field electron emission , nanotechnology , silicon , nanowire , optoelectronics , electron , composite material , physics , quantum mechanics

Silicon nanowires (SiNWs) were uniformly decorated with ultrananocrystalline diamond (UNCD) by a novel route using paraffin wax as the seeding source, which is more efficient in the creation of diamond nuclei than traditional methods. These one-dimensional ultrananocrystalline diamond-decorated SiNWs (UNCD/SiNWs) exhibit uniform diameters ranging from 100 to 200 nm with a bulbous catalytic tip of ∼250 nm in diameter and an UNCD grain size of ∼5 nm. UNCD/SiNW nanostructures demonstrated enhanced electron field emission (EFE) properties with a turn-on field of about 3.7 V/μm. Current densities around 2 mA/cm(2) were achieved at 25 V/μm, which is significantly enhanced as compared to bare SiNWs.

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