Phthalocyanine Photoregeneration for Low Power Consumption Chemiresistors

It is well-known that the applicability of phthalocyanine chemiresistors suffers from long recovery time after NO 2 exposure. This circumstance enforces the necessity to operate the sensors at elevated temperatures (150-200 °C), which shortens the sensor lifetime and increases its power consumption (regardless, a typical measurement period is longer than 15 min). In this paper, we propose a new method for fast and effective recovery by UV-vis illumination at a low temperature (55 °C). The method is based on short illumination following short NO 2 exposure. To support and optimize the method, we investigated the effects of light in the wavelength and intensity ranges of 375-850 nm and 0.2-0.8 mW/mm 2 , respectively, on the rate of NO 2 desorption from the phthalocyanine sensitive layer during the recovery period. This investigation was carried out for a set of phthalocyanine materials (ZnPc, CuPc, H 2 Pc, PbPc, and FePc) operating at slightly elevated temperatures (55-100 °C) and was further supported by the analysis of UV-vis and FTIR spectral changes. We found out that the light with the wavelength shorter than 550 nm significantly accelerates the NO 2 desorption from ZnPc, CuPc, and FePc, and allows bringing the measurement period under 2 min and decreasing the sensor power consumption by 75%. Possible mechanisms of the light-stimulated desorption are discussed.