Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination | Zendy

Ravi Mohan Prasad | Zendy; Stefan Lauterbach | Zendy; HansJoachim Kleebe | Zendy; Odile MerdrignacConanec | Zendy; Nicolae Bârsan | Zendy; Udo Weimar | Zendy; Aleksander Gurlo | Zendy

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Response of Gallium Nitride Chemiresistors to Carbon Monoxide is Due to Oxygen Contamination

Author(s) -

Ravi Mohan Prasad,

Stefan Lauterbach,

HansJoachim Kleebe,

Odile MerdrignacConanec,

Nicolae Bârsan,

Udo Weimar,

Aleksander Gurlo

Publication year - 2017

Publication title -

acs sensors

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.055

H-Index - 57

ISSN - 2379-3694

DOI - 10.1021/acssensors.7b00064

Subject(s) - carbon monoxide , contamination , oxygen , gallium , materials science , carbon fibers , gallium nitride , metallurgy , nanotechnology , chemistry , composite material , organic chemistry , biology , layer (electronics) , catalysis , ecology , composite number

We report on the influence of oxygen impurities on the gas sensing properties of gallium nitride (GaN) chemiresistors. As shown by XRD, elemental analysis, and TEM characterization, surface oxidation of GaN-for example, upon contact to ambient air atmosphere-creates an oxidative amorphous layer which provides the sites for the sensing toward CO. Treating this powder under dry ammonia at 800 °C converts the oxide layer in nitride, and consequently the sensing performance toward CO is dramatically reduced for ammonia treated GaN gas sensors. Hence the response of GaN sensors to CO is caused by oxygen in the form of amorphous surface oxide or oxynitride.

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