Enhanced Four-Wave Mixing in Doubly Resonant Si Nanoresonators
Author(s) -
Rémi Colom,
Lei Xu,
Loris Marini,
F. Bedu,
Igor Ozerov,
Thomas Bégou,
Julien Lumeau,
Andrey E. Miroshnishenko,
Dragomir N. Neshev,
Boris T. Kuhlmey,
Stefano Palomba,
Nicolas Bonod
Publication year - 2019
Publication title -
acs photonics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.735
H-Index - 89
ISSN - 2330-4022
DOI - 10.1021/acsphotonics.9b00442
Subject(s) - resonator , four wave mixing , physics , optics , signal (programming language) , electric field , wavelength , excitation , laser , resonance (particle physics) , nonlinear optics , energy conversion efficiency , optoelectronics , materials science , atomic physics , quantum mechanics , computer science , programming language
Frequency conversion is one of the main applications of nonlinear optical processes in which a signal is produced at a different wavelength from the excitation wavelength. In particular, four-wave mixing (FWM) is a third order nonlinear optical process that allows, for instance, the generation of visible frequencies by tuning near-infrared laser pumps. Here, in order to augment the very weak FWM conversion efficiency, we design silicon Mie resonators that exhibit two resonances of the internal electric field intensity around the frequency range of the laser pumps. The linear extinction spectrum of the individual Si resonator is first measured by bright field spectroscopy and compared with numerical simulations to confirm the existence of the two resonances corresponding to electric and magnetic dipole excitations. The FWM signal is then measured for a single Si nanoresonator when the first pump is set to the electric resonance while tuning the frequency of the second pump across the magnetic dipolar resonance. We show that the FWM signal generated in the visible spectrum is maximum when the frequency of the tunable pump corresponds to the maximum of the internal electric field intensity. At this position, the FWM signal is enhanced by more than 2 orders of magnitude compared with the FWM signal generated by the unpatterned silicon film.
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