Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band | Zendy

Jonathan R. Orchard | Zendy; Christopher Woodhead | Zendy; Jiang Wu | Zendy; Mingchu Tang | Zendy; Richard Beanland | Zendy; Yasir J. Noori | Zendy; Huiyun Liu | Zendy; Robert J. Young | Zendy; D. J. Mowbray | Zendy

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Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

Author(s) -

Jonathan R. Orchard,

Christopher Woodhead,

Jiang Wu,

Mingchu Tang,

Richard Beanland,

Yasir J. Noori,

Huiyun Liu,

Robert J. Young,

D. J. Mowbray

Publication year - 2017

Publication title -

acs photonics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.735

H-Index - 89

ISSN - 2330-4022

DOI - 10.1021/acsphotonics.7b00276

Subject(s) - quantum dot , optoelectronics , materials science , substrate (aquarium) , silicon , wavelength , geology , oceanography

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics

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