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Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
Author(s) -
Wei Dou,
Yuanyuan Tan
Publication year - 2019
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.9b03118
Subject(s) - logic gate , materials science , gate dielectric , optoelectronics , transistor , emitter coupled logic , electrical engineering , threshold voltage , voltage , and gate , pass transistor logic , engineering
Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or -1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed.

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