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Air-Stable Thin Films with High and Anisotropic Electrical Conductivities Composed of a Carbon-Centered Neutral π-Radical
Author(s) -
Hiroshi Itô,
T. Murata,
Takahiro Miyata,
Miwa Morita,
Ryotaro Tsuji,
Yasushi Morita
Publication year - 2019
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.9b02700
Subject(s) - materials science , thin film , stacking , indium tin oxide , amorphous solid , carbon film , graphite , chemical vapor deposition , electrical resistivity and conductivity , deposition (geology) , amorphous carbon , carbon fibers , delocalized electron , epitaxy , analytical chemistry (journal) , composite material , layer (electronics) , crystallography , nanotechnology , chemistry , organic chemistry , composite number , electrical engineering , biology , paleontology , engineering , sediment
Air-stable thin films (50-720 nm thickness) composed of a carbon-centered neutral π-radical with high and anisotropic electrical conductivities were fabricated by vapor deposition of 4,8,12-trioxotriangulene ( TOT ). The thin films were air-stable over 15 months and were the aggregate of TOT microcrystals, in which a one-dimensional π-stacking column was formed through the strong singly occupied molecular orbital (SOMO)-SOMO interaction with two-electron-multicenter bond among the spin-delocalized π-planes. The orientations of the one-dimensional column of TOT were changed depending on the deposition rate and substrates, where face-on-oriented thin films were epitaxially grown on the graphite 0001 surface, and edge-on-oriented thin films were grown on glass, SiO 2 , and indium tin oxide substrates under a high-deposition rate condition. The films showed high electrical conductivities of 2.5 × 10 -2 and 5.9 × 10 -5 S cm -1 along and perpendicular to the π-stacking column, respectively, for an edge-on oriented thin film.

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