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The multilayer 1T-TaSe 2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO 2 /Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe 2 . Temperature-dependent resistivity reveals that the multilayer 1T-TaSe 2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe 2 and HfSe 2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2/Si Using Ion Beam Technology

Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology