Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation | Zendy

Gioele Mirabelli | Zendy; Lee A. Walsh | Zendy; Farzan Gity | Zendy; Shubhadeep Bhattacharjee | Zendy; Conor P. Cullen | Zendy; Cormac Ó Coileáin | Zendy; Scott Monaghan | Zendy; Niall McEvoy | Zendy; Roger Nagle | Zendy; Paul K. Hurley | Zendy; Ray Duffy | Zendy

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Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation

Author(s) -

Gioele Mirabelli,

Lee A. Walsh,

Farzan Gity,

Shubhadeep Bhattacharjee,

Conor P. Cullen,

Cormac Ó Coileáin,

Scott Monaghan,

Niall McEvoy,

Roger Nagle,

Paul K. Hurley,

Ray Duffy

Publication year - 2019

Publication title -

acs omega

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.779

H-Index - 40

ISSN - 2470-1343

DOI - 10.1021/acsomega.9b02291

Subject(s) - annealing (glass) , raman spectroscopy , x ray photoelectron spectroscopy , materials science , contact resistance , alloy , transmission electron microscopy , forming gas , inert gas , metal , spectroscopy , contact angle , scanning transmission electron microscopy , transition metal , chemical engineering , analytical chemistry (journal) , metallurgy , nanotechnology , composite material , chemistry , optics , biochemistry , physics , layer (electronics) , quantum mechanics , chromatography , engineering , catalysis

Forming gas annealing is a common process step used to improve the performance of devices based on transition-metal dichalcogenides (TMDs). Here, the impact of forming gas anneal is investigated for PtSe 2 -based devices. A range of annealing temperatures (150, 250, and 350 °C) were used both in inert (0/100% H 2 /N 2 ) and forming gas (5/95% H 2 /N 2 ) environments to separate the contribution of temperature and ambient. The samples are electrically characterized by circular transfer length method structures, from which contact resistance and sheet resistance are analyzed. Ti and Ni are used as metal contacts. Ti does not react with PtSe 2 at any given annealing step. In contrast to this, Ni reacts with PtSe 2 , resulting in a contact alloy formation. The results are supported by a combination of X-ray photoelectron spectroscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy, and cross-sectional transmission electron microscopy. The work sheds light on the impact of forming gas annealing on TMD-metal interfaces, and on the TMD film itself, which could be of great interest to improve the contact resistance of TMD-based devices.

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