Charge Accumulation, Recombination, and Their Associated Time Scale in Efficient (GUA)x(MA)1–xPbI3-Based Perovskite Solar Cells | Zendy

Daniel Prochowicz | Zendy; Mohammad Mahdi Tavakoli | Zendy; Anwar Q. Alanazi | Zendy; Suverna Trivedi | Zendy; Hadi Tavakoli Dastjerdi | Zendy; Shaik M. Zakeeruddin | Zendy; Michaël Grätzel | Zendy; Pankaj Yadav | Zendy

Open Access

Charge Accumulation, Recombination, and Their Associated Time Scale in Efficient (GUA)_x(MA)_1–xPbI₃-Based Perovskite Solar Cells

Author(s) -

Daniel Prochowicz,

Mohammad Mahdi Tavakoli,

Anwar Q. Alanazi,

Suverna Trivedi,

Hadi Tavakoli Dastjerdi,

Shaik M. Zakeeruddin,

Michaël Grätzel,

Pankaj Yadav

Publication year - 2019

Publication title -

acs omega

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.779

H-Index - 40

ISSN - 2470-1343

DOI - 10.1021/acsomega.9b01701

Subject(s) - perovskite (structure) , dielectric spectroscopy , materials science , surface photovoltage , ion , ionic bonding , open circuit voltage , charge (physics) , capacitance , depletion region , layer (electronics) , chemical physics , electrochemistry , perovskite solar cell , optoelectronics , spectroscopy , analytical chemistry (journal) , voltage , solar cell , chemistry , nanotechnology , crystallography , physics , electrode , organic chemistry , quantum mechanics , chromatography

Here, we study the influence of guanidinium (GUA) ions on the open-circuit voltage ( V oc ) in the (GUA) x (MA) 1- x PbI 3 based perovskite solar cells. We demonstrate that incorporation of GUA forms electronic and ionic accumulation regions at the interface of the electron transporting layer and perovskite absorber layer. Our electrochemical impedance spectroscopy results prove that the formed accumulation region is associated with the enhanced surface charge capacitance and photovoltage. Furthermore, we also demonstrate the influence of the GUA ions on the enhanced interfacial and bulk electronic properties due to more efficient charge transfer between the bulk and interfaces and the reduced electronic defect energy levels.

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