Relationship between Crystal Structures and the Relaxor Property of SrBi2(Ta2–xVx)O9 Ceramics
Author(s) -
ChiaChing Wu,
ChengFu Yang
Publication year - 2019
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.9b01398
Subject(s) - materials science , sintering , dielectric , ceramic , curie temperature , ferroelectricity , raman spectroscopy , phase transition , crystal structure , octahedron , lattice constant , analytical chemistry (journal) , mineralogy , condensed matter physics , diffraction , crystallography , composite material , ferromagnetism , optics , chemistry , optoelectronics , physics , chromatography
Here, V 2 O 5 was used to substitute Ta 2 O 5 in SrBi 2 Ta 2 O 9 (SBT) and SrBi 2 (Ta 2- x V x )O 9 (SBTV) ceramics were formed. This study revealed that the substitution of Ta 2 O 5 by V 2 O 5 enhances the maximum dielectric constant (ε m ), increases the transition temperature, and reduces the sintering temperature of SBT ceramics. The diffraction intensity of c -axis-preferred orientation of SBTV ceramics increases with the increase in V 2 O 5 concentration and sintering temperature. Disk-type grains were observed in the SBTV ceramics at higher sintering temperatures. By the Curie-Weiss law and modified Curie-Weiss law, the phase transitions of the SBTV ceramics were discussed. The dielectric properties of SBTV ceramics revealed that the relaxor-type ferroelectric characteristics became more obvious than the normal-type ferroelectric characteristics at high V 2 O 5 concentrations and sintering temperatures. Raman spectroscopy was successfully used to study the lattice vibrational modes and structural transitions of SBTV ceramics. The spectra proved that as V 2 O 5 was added to SBTV ceramics the octahedral TaO 6 and VO 6 structures exhibited a high frequency mode.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom