Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy | Zendy

Kazuhisa Sato | Zendy; Hidehiro Yasuda | Zendy

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Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy

Author(s) -

Kazuhisa Sato,

Hidehiro Yasuda

Publication year - 2018

Publication title -

acs omega

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.779

H-Index - 40

ISSN - 2470-1343

DOI - 10.1021/acsomega.8b02078

Subject(s) - materials science , micrometer , transmission electron microscopy , dislocation , scanning transmission electron microscopy , epitaxy , optoelectronics , gallium nitride , scanning electron microscope , optics , usable , nanotechnology , composite material , physics , layer (electronics) , world wide web , computer science

We report on extreme penetration power of relativistic electrons in a micrometer-thick gallium nitride epitaxial film and its application to probing threading dislocations, which were introduced during crystal growth. Maximum usable thickness of the specimen was quantitatively evaluated using high-voltage transmission electron microscopy (TEM) operating at 1 MV. The width of dislocation images was used as a measure for the evaluation of usable thickness. Superior maximum usable thickness was obtained in scanning transmission electron microscopy (STEM) than in TEM mode; the results were 6.9 μm for STEM and 4.4 μm for TEM. In STEM, dislocations can be imaged with an almost constant width of 15-20 nm in a wide thickness range 1-4 μm. The latest high-voltage STEM is thus useful for observing dislocations in micrometer-thick inorganic materials.

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