z-logo
open-access-imgOpen Access
Combination of Solid-State and Electrochemical Impedance Spectroscopy To Explore Effects of Porosity in Sol–Gel-Derived BaTiO3 Thin Films
Author(s) -
Joshua Whittam,
Andrew L. Hector,
Christopher M. Kavanagh,
John R. Owen,
Gillian Reid
Publication year - 2018
Publication title -
acs omega
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.779
H-Index - 40
ISSN - 2470-1343
DOI - 10.1021/acsomega.8b00173
Subject(s) - dielectric spectroscopy , materials science , porosity , solid state , spectroscopy , thin film , sol gel , electrochemistry , electrical impedance , composite material , chemical engineering , analytical chemistry (journal) , nanotechnology , chemistry , electrode , organic chemistry , electrical engineering , engineering , physics , quantum mechanics
BaTiO 3 thin films were deposited onto polycrystalline Pt using a dip-coating technique, with annealing temperatures of 750-900 °C. To avoid film imperfections such as cracking or pinholes, key conditions, including aging periods, water content, and stirring speeds, were refined to produce a pinhole-free, uniform film with some porosity. Whereas those coated a single time short circuited during electrical characterization, this could be avoided in films produced by multiple coating cycles. The effective permittivity of a 600 nm BaTiO 3 film was measured at 290 by fitting solid-state impedance data in the frequency range of 100 Hz to 1 MHz. Electrochemical impedance with an aqueous electrolyte allowed evaluation of the porosity, which remained fairly constant between 1 and 5 coating cycles. Using this method, it was possible to estimate the effective permittivity of the BaTiO 3 itself as 374 and hence to evaluate the increase in the effective permittivity that could be achieved by minimizing porosity.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom