Cesium-Doped Vanadium Oxide as the Hole Extraction Layer for Efficient Perovskite Solar Cells | Zendy

Xiang Yao | Zendy; Jun Qi | Zendy; Wenzhan Xu | Zendy; Xiaofang Jiang | Zendy; Xiong Gong | Zendy; Yong Cao | Zendy

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Cesium-Doped Vanadium Oxide as the Hole Extraction Layer for Efficient Perovskite Solar Cells

Author(s) -

Xiang Yao,

Jun Qi,

Wenzhan Xu,

Xiaofang Jiang,

Xiong Gong,

Yong Cao

Publication year - 2018

Publication title -

acs omega

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.779

H-Index - 40

ISSN - 2470-1343

DOI - 10.1021/acsomega.7b01944

Subject(s) - perovskite (structure) , materials science , doping , non blocking i/o , energy conversion efficiency , vanadium , thin film , electrical resistivity and conductivity , layer (electronics) , oxide , vanadium oxide , boosting (machine learning) , optoelectronics , extraction (chemistry) , chemical engineering , nanotechnology , metallurgy , chemistry , electrical engineering , catalysis , biochemistry , machine learning , computer science , engineering , chromatography

In this study, we report the utilization of low-temperature solution-processed Cs-doped VO X thin films as the hole extraction layers (HELs) in perovskite solar cells (PSCs). It is found that the VO X : y Cs (where y is the mole ratio of Cs versus V and y = 0.1, 0.3, and 0.5) thin films possess better electrical conductivities than that of the pristine VO X thin film. As a result, the PSCs incorporated with the VO X : y Cs HEL exhibit large fill factors and high short-circuit currents, with consequently high power conversion efficiencies, which is more than 30% enhancement as compared with pristine VO X HEL. Our studies provide a facial way to enhance the electrical conductivity of the hole extraction layer for boosting device performance of perovskite solar cells.

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