Atmospheric Deposition of Modified Graphene Oxide on Silicon by Evaporation-Assisted Deposition

We present a deposition technique termed evaporation-assisted deposition (EAD). The technique is based on a coupled evaporation-to-condensation transfer process at atmospheric conditions, where graphene oxide (GO) is transferred to a Si wafer via the vapor flux between an evaporating droplet and the Si surface. The EAD process is monitored with visible and infrared cameras. GO deposits on Si are characterized by both Raman spectroscopy and X-ray photoelectron spectroscopy. We find that a scaled energy barrier for the condensate is required for EAD, which corresponds to specific solution-substrate properties that exhibit a minimized free energy barrier at the solid-liquid-vapor interface.