Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films | Zendy

Aile Tamm | Zendy; Kristjan Kalam | Zendy; Helina Seemen | Zendy; Jekaterina Kozlova | Zendy; Kaupo Kukli | Zendy; Jaan Aarik | Zendy; Joosep Link | Zendy; Raivo Stern | Zendy; S. Dueñas | Zendy; Helena Castán | Zendy

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Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

Author(s) -

Aile Tamm,

Kristjan Kalam,

Helina Seemen,

Jekaterina Kozlova,

Kaupo Kukli,

Jaan Aarik,

Joosep Link,

Raivo Stern,

S. Dueñas,

Helena Castán

Publication year - 2017

Publication title -

acs omega

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.779

H-Index - 40

ISSN - 2470-1343

DOI - 10.1021/acsomega.7b01394

Subject(s) - materials science , erbium , oxide , atomic layer deposition , thin film , titanium , silicon , metal , layer (electronics) , iron oxide , nitride , silicon oxide , titanium oxide , permittivity , magnetization , silicon nitride , chemical engineering , optoelectronics , metallurgy , dielectric , composite material , nanotechnology , magnetic field , doping , physics , quantum mechanics , engineering

Mixed films of a high-permittivity oxide, Er 2 O 3 , and a magnetic material, Fe 2 O 3 , were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.

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