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Topotactic Growth of Edge-Terminated MoS2 from MoO2 Nanocrystals
Author(s) -
Christian DahlPetersen,
Manuel Šarić,
Michael Brorson,
Poul Georg Moses,
Jan Rossmeisl,
Jeppe V. Lauritsen,
Stig Helveg
Publication year - 2018
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/acsnano.8b00125
Subject(s) - sulfidation , nanocrystal , materials science , enhanced data rates for gsm evolution , transition metal , transmission electron microscopy , nanomaterials , density functional theory , nanotechnology , chemical physics , crystallography , chemistry , sulfur , computational chemistry , metallurgy , catalysis , telecommunications , biochemistry , computer science
Layered transition metal dichalcogenides have distinct physicochemical properties at their edge-terminations. The production of an abundant density of edge structures is, however, impeded by the excess surface energy of edges compared to basal planes and would benefit from insight into the atomic growth mechanisms. Here, we show that edge-terminated MoS 2 nanostructures can form during sulfidation of MoO 2 nanocrystals by using in situ transmission electron microscopy (TEM). Time-resolved TEM image series reveal that the MoO 2 surface can sulfide by inward progression of MoO 2 (202̅):MoS 2 (002) interfaces, resulting in upright-oriented and edge-exposing MoS 2 sheets. This topotactic growth is rationalized in the interplay with density functional theory calculations by successive O-S exchange and Mo sublattice restructuring steps. The analysis shows that formation of edge-terminated MoS 2 is energetically favorable at MoO 2 (110) surfaces and provides a necessary requirement for the propensity of a specific MoO 2 surface termination to form edge-terminated MoS 2 . Thus, the present findings should benefit the rational development of transition metal dichalcogenide nanomaterials with abundant edge terminations.

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