Direct Synthesis of Hyperdoped Germanium Nanowires | Zendy

Michael S. Seifner | Zendy; Masiar Sistani | Zendy; Fabrizio Porrati | Zendy; Giorgia Di Prima | Zendy; Patrik Pertl | Zendy; Michael Huth | Zendy; Alois Lugstein | Zendy; Sven Barth | Zendy

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Direct Synthesis of Hyperdoped Germanium Nanowires

Author(s) -

Michael S. Seifner,

Masiar Sistani,

Fabrizio Porrati,

Giorgia Di Prima,

Patrik Pertl,

Michael Huth,

Alois Lugstein,

Sven Barth

Publication year - 2018

Publication title -

acs nano

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.554

H-Index - 382

eISSN - 1936-086X

pISSN - 1936-0851

DOI - 10.1021/acsnano.7b07248

Subject(s) - nanowire , germanium , dopant , materials science , doping , semiconductor , metal , nanotechnology , homogeneous , vapor–liquid–solid method , electrical resistivity and conductivity , optoelectronics , silicon , metallurgy , physics , engineering , electrical engineering , thermodynamics

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ∼300 μΩcm due to Ga hyperdoping with electronic contributions of one-third of the incorporated Ga atoms. This is the highest conduction value observed by in situ doping of group IV nanowires reported to date. This work demonstrates that Ga is both an efficient seed material at low temperatures for Ge nanowire growth and an effective dopant changing the semiconductor into a metal-like conductor.

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