Open AccessReply to “Comment on ‘Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed’”
Author(s) -
Jin Sung Kim,
Kwang H. Lee,
Seongil Im
Publication year - 2016
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/acsnano.5b08198
Subject(s) - citation , altmetrics , schottky barrier , van der waals force , physics , computer science , world wide web , nanotechnology , condensed matter physics , engineering physics , electrical engineering , materials science , optoelectronics , quantum mechanics , engineering , diode , molecule
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