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Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes
Author(s) -
Hanna Pazniak,
Mohamed Benchakar,
Thomas Bilyk,
A. Liedl,
Yan Busby,
Céline Noël,
Patrick Chartier,
Simon Hurand,
M. Marteau,
Laurent Houssiau,
R. Larciprete,
Paolo Lacovig,
Daniel Lizzit,
Ezequiel Tosi,
Silvano Lizzit,
J. Pacaud,
Stéphane Célérier,
Vincent Mauchamp,
MarieLaure David
Publication year - 2021
Publication title -
acs nano
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.554
H-Index - 382
eISSN - 1936-086X
pISSN - 1936-0851
DOI - 10.1021/acsnano.0c06735
Subject(s) - mxenes , surface modification , materials science , x ray photoelectron spectroscopy , ion implantation , nitride , ion , doping , carbide , max phases , layer (electronics) , nanotechnology , chemical engineering , optoelectronics , chemistry , metallurgy , organic chemistry , engineering
MXenes are a young family of two-dimensional transition metal carbides, nitrides, and carbonitrides with highly controllable structure, composition, and surface chemistry to adjust for target applications. Here, we demonstrate the modifications of two-dimensional MXenes by low-energy ion implantation, leading to the incorporation of Mn ions in Ti 3 C 2 T x (where T x is a surface termination) thin films. Damage and structural defects caused by the implantation process are characterized at different depths by XPS on Ti 2p core-level spectra, by ToF-SIMS, and with electron energy loss spectroscopy analyses. Results show that the ion-induced alteration of the damage tolerant Ti 3 C 2 T x layer is due to defect formation at both Ti and C sites, thereby promoting the functionalization of these sites with oxygen groups. This work contributes to the inspiring approach of tailoring 2D MXene structure and properties through doping and defect formation by low-energy ion implantation to expand their practical applications.

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