Open AccessEu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites
Author(s) -
N. Ben Sédrine,
J. Rodrigues,
Djibril Faye,
A.J. Neves,
E. Alves,
Michał Boćkowski,
Veit Hoffmann,
M. Weyers,
K. Lorenz,
M. R. Correia,
T. Monteiro
Publication year - 2018
Publication title -
acs applied nano materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.227
H-Index - 29
ISSN - 2574-0970
DOI - 10.1021/acsanm.8b00612
Subject(s) - photoluminescence , materials science , superlattice , optoelectronics , luminescence , diode , light emitting diode , annealing (glass) , excitation , doping , photoluminescence excitation , metallurgy , electrical engineering , engineering
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