Open AccessIn-Gap States of HfO2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices
Author(s) -
Niclas Schmidt,
K. Z. Rushchanskii,
Urška Trstenjak,
Regina Dittmann,
Silvia Karthäuser
Publication year - 2022
Publication title -
acs applied nano materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.227
H-Index - 29
ISSN - 2574-0970
DOI - 10.1021/acsanm.2c04165
Subject(s) - materials science , resistive random access memory , nucleation , band gap , ab initio , nanotechnology , chemical physics , ab initio quantum chemistry methods , optoelectronics , chemistry , organic chemistry , electrode , molecule
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