z-logo
open-access-imgOpen Access
Tandem Si Micropillar Array Photocathodes with Conformal Copper Oxide and a Protection Layer by Pulsed Laser Deposition
Author(s) -
Pramod Patil Kunturu,
Christos Zachariadis,
Łukasz Witczak,
Minh D. Nguyen,
Guus Rijnders,
Jurriaan Huskens
Publication year - 2019
Publication title -
acs applied materials and interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/acsami.9b14408
Subject(s) - materials science , photocurrent , heterojunction , optoelectronics , passivation , photocathode , pulsed laser deposition , layer (electronics) , planar , stack (abstract data type) , nanotechnology , thin film , physics , computer graphics (images) , quantum mechanics , computer science , programming language , electron
This work demonstrates the influence of high-quality protection layers on Si-Cu 2 O micropillar arrays created by pulsed laser deposition (PLD), with the goal to overcome photodegradation and achieve long-term operation during photoelectrochemical (PEC) water splitting. Sequentially, we assessed planar and micropillar device designs with various design parameters and their influence on PEC hydrogen evolution reaction. On the planar device substrates, a Cu 2 O film thickness of 600 nm and a Cu 2 O/CuO heterojunction layer with a 5:1 thickness ratio between Cu 2 O to CuO were found to be optimal. The planar Si/Cu 2 O/CuO heterostructure showed a higher PV performance ( J sc = 20 mA/cm 2 ) as compared to the planar Si/Cu 2 O device, but micropillar devices did not show this improvement. Multifunctional overlayers of ZnO (25 nm) and TiO 2 (100 nm) were employed by PLD on Si/Cu 2 O planar and micropillar arrays to provide a hole-selective passivation layer that acts against photocorrosion. A micropillar Si/ITO-Au/Cu 2 O/ZnO/TiO 2 /Pt stack was compared to a planar device. Under optimized conditions, the Si/Cu 2 O photocathode with Pt as a HER catalyst displayed a photocurrent of 7.5 mA cm -2 at 0 V vs RHE and an onset potential of 0.85 V vs RHE, with a stable operation for 75 h.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom