Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon | Zendy

Jike Lyu | Zendy; Saúl Estandía | Zendy; Jaume Gázquez | Zendy; Matthew F. Chisholm | Zendy; Ignasi Fina | Zendy; N. Dix | Zendy; J. Fontcuberta | Zendy; F. Sánchez | Zendy

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Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO₃ Films on Silicon

Author(s) -

Jike Lyu,

Saúl Estandía,

Jaume Gázquez,

Matthew F. Chisholm,

Ignasi Fina,

N. Dix,

J. Fontcuberta,

F. Sánchez

Publication year - 2018

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.8b07778

Subject(s) - materials science , epitaxy , ferroelectricity , wafer , pulsed laser deposition , strain engineering , silicon , perpendicular , thin film , optoelectronics , lattice (music) , substrate (aquarium) , polar , lattice constant , condensed matter physics , composite material , nanotechnology , diffraction , optics , dielectric , layer (electronics) , geology , acoustics , astronomy , oceanography , geometry , mathematics , physics

Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO 3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (ε > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.

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