Large-Area Heterostructures from Graphene and Encapsulated Colloidal Quantum Dots via the Langmuir–Blodgett Method | Zendy

Andrés Black | Zendy; Jonathan Roberts | Zendy; Marı́a Acebrón | Zendy; Ramón Bernardo Gavito | Zendy; Ghazi Alsharif | Zendy; Fernando J. Urbanos | Zendy; Beatriz H. Juárez | Zendy; Oleg Kolosov | Zendy; Benjamin J. Robinson | Zendy; Rodolfo Miranda | Zendy; Amadeo L. Vázquez de Parga | Zendy; Daniel Granados | Zendy; Robert J. Young | Zendy

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Large-Area Heterostructures from Graphene and Encapsulated Colloidal Quantum Dots via the Langmuir–Blodgett Method

Author(s) -

Andrés Black,

Jonathan Roberts,

Marı́a Acebrón,

Ramón Bernardo Gavito,

Ghazi Alsharif,

Fernando J. Urbanos,

Beatriz H. Juárez,

Oleg Kolosov,

Benjamin J. Robinson,

Rodolfo Miranda,

Amadeo L. Vázquez de Parga,

Daniel Granados,

Robert J. Young

Publication year - 2018

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.7b17102

Subject(s) - materials science , langmuir–blodgett film , quantum dot , graphene , heterojunction , nanotechnology , colloid , colloidal particle , colloidal crystal , monolayer , chemical engineering , optoelectronics , engineering

This work explores the assembly of large-area heterostructures comprised of a film of silica-encapsulated, semiconducting colloidal quantum dots, deposited via the Langmuir-Blodgett method, sandwiched between two graphene sheets. The luminescent, electrically insulating film served as a dielectric, with the top graphene sheet patterned into an electrode and successfully used as a top gate for an underlying graphene field-effect transistor. This heterostructure paves the way for developing novel hybrid optoelectronic devices through the integration of 2D and 0D materials.

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