Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices | Zendy

Tamilselvan Velusamy | Zendy; Somak Mitra | Zendy; Manuel MacíasMontero | Zendy; Vladimír Švrček | Zendy; Davide Mariotti | Zendy

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Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Author(s) -

Tamilselvan Velusamy,

Somak Mitra,

Manuel MacíasMontero,

Vladimír Švrček,

Davide Mariotti

Publication year - 2015

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.5b06577

Subject(s) - materials science , doping , photoluminescence , microplasma , dopant , quantum yield , nanotechnology , nanocrystal , optoelectronics , silicon , photovoltaic system , optics , physics , fluorescence , plasma , quantum mechanics , ecology , biology

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.

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