Open AccessMixed Dimensional ZnO/WSe2 Piezo-gated Transistor with Active Millinewton Force Sensing
Author(s) -
Yulin Geng,
Jun Xu,
Muhammad Ammar Bin Che Mahzan,
Peter Lomax,
Muhammad Mubasher Saleem,
Enrico Mastropaolo,
Rebecca Cheung
Publication year - 2022
Publication title -
acs applied materials and interfaces
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/acsami.2c15730
Subject(s) - tungsten diselenide , materials science , piezoelectricity , transistor , optoelectronics , nanorod , doping , microscale chemistry , nanogenerator , nanotechnology , pressure sensor , field effect transistor , electrical engineering , composite material , mechanical engineering , transition metal , voltage , biochemistry , chemistry , mathematics education , mathematics , engineering , catalysis
This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe 2 ) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (Δ I ds ) on the WSe 2 channel. The different doping types of the WSe 2 channel have been found to lead to different directions of Δ I ds . The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I ds change for ZnO NRs on the p-type doped WSe 2 device and an ∼-10% I ds change for the device with an n-type doped WSe 2 . The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.