Temperature-Dependent Coherent Tunneling across Graphene–Ferritin Biomolecular Junctions
Author(s) -
Nipun Kumar Gupta,
K. Senthil Kumar,
Rupali Reddy Pasula,
Ayelet Vilan,
Jens Martin,
Wentao Xu,
Esther Maria May,
Andrew R. Pike,
Hippolyte P. A. G. Astier,
Teddy Salim,
Sierin Lim,
Christian A. Nijhuis
Publication year - 2022
Publication title -
acs applied materials and interfaces
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/acsami.2c11263
Subject(s) - graphene , materials science , quantum tunnelling , biomolecule , raman spectroscopy , chemical physics , fermi level , nanotechnology , charge carrier , electrode , phonon , condensed matter physics , optoelectronics , chemistry , physics , electron , quantum mechanics , optics
Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked. This paper reveals the prominent role of graphene interfaces with Fe-storing proteins in the net CT across their tunnel junctions. Here, ferritin (AfFtn-AA) is adsorbed on the graphene by noncovalent amine-graphene interactions confirmed with Raman spectroscopy. In contrast to junctions with metal electrodes, graphene has a vanishing density of states toward its intrinsic Fermi level ("Dirac point"), which increases away from the Fermi level. Therefore, the amount of charge carriers is highly sensitive to temperature and electrostatic charging (induced doping), as deduced from a detailed analysis of CT as a function of temperature and iron loading. Remarkably, the temperature dependence can be fully explained within the coherent tunneling regime due to excitation of hot carriers. Graphene is not only demonstrated as an alternative platform to study CT across biomolecular tunnel junctions, but it also opens rich possibilities in employing interface electrostatics in tuning CT behavior.
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