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Transition-metal dichalcogenides (TMDs) represent a class of materials whose archetypes, such as MoS 2 and WS 2 , possess exceptional electronic and optical properties and have been massively exploited in optoelectronic applications. The layered structure allows for their exfoliation to two-dimensional samples with atomic thickness (≲ 1 nm), promising for ultrathin, ultralight devices. In this work, by means of state-of-the-art ab initio many-body perturbation theory techniques, we focus on single-layer PdS 2 and PtS 2 and propose a novel van der Waals heterostructure with outstanding light absorbance, reaching up to 50% in the visible spectrum and yielding a maximum short-circuit current of 7.2 mA/cm 2 under solar irradiation. The computed excitonic landscape predicts a partial charge separation between the two layers and the momentum-forbidden lowest-energy state increases the carrier diffusion length. Our results show that the employment of vertical heterostructures with less conventional TMDs, such as PdS 2 /PtS 2 , can greatly boost light absorbance and favor the development of more efficient, atomic-thin photovoltaic devices.

Boosted Solar Light Absorbance in PdS2/PtS2 Vertical Heterostructures for Ultrathin Photovoltaic Devices

Boosted Solar Light Absorbance in PdS₂/PtS₂ Vertical Heterostructures for Ultrathin Photovoltaic Devices