Open AccessA Simplified Method for Patterning Graphene on Dielectric Layers
Author(s) -
Håkon I. Røst,
Benjamen P. Reed,
Frode S. Strand,
Joseph A. Durk,
D. A. Evans,
Antonija GrubišićČabo,
Gary Wan,
Mattia Cattelan,
Maurício J. Prieto,
Daniel M. Gottlob,
Liviu C. Tănase,
Lucas de Souza Caldas,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Rajesh Kumar Chellappan,
Justin W. Wells,
Simon P. Cooil
Publication year - 2021
Publication title -
acs applied materials and interfaces
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.535
H-Index - 228
eISSN - 1944-8252
pISSN - 1944-8244
DOI - 10.1021/acsami.1c09987
Subject(s) - graphene , materials science , dielectric , microelectronics , substrate (aquarium) , nanotechnology , oxidizing agent , graphene oxide paper , layer (electronics) , graphene nanoribbons , intercalation (chemistry) , graphene foam , optoelectronics , inorganic chemistry , oceanography , chemistry , organic chemistry , geology
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO 2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
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