Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells | Zendy

Van Ben Chu | Zendy; Daniel Siopa | Zendy; Alice Debot | Zendy; Damilola Adeleye | Zendy; Mohit Sood | Zendy; Alberto Lomuscio | Zendy; Michele Melchiorre | Zendy; J. Guillot | Zendy; Nathalie Valle | Zendy; Brahime El Adib | Zendy; Jonathan Rommelfangen | Zendy; Phillip J. Dale | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)₂ Thin-Film Solar Cells

Author(s) -

Van Ben Chu,

Daniel Siopa,

Alice Debot,

Damilola Adeleye,

Mohit Sood,

Alberto Lomuscio,

Michele Melchiorre,

J. Guillot,

Nathalie Valle,

Brahime El Adib,

Jonathan Rommelfangen,

Phillip J. Dale

Publication year - 2021

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.0c16860

Subject(s) - copper indium gallium selenide solar cells , materials science , wetting , annealing (glass) , chemical bath deposition , thin film , chemical engineering , buffer (optical fiber) , layer (electronics) , drop (telecommunication) , energy conversion efficiency , solar cell , optoelectronics , nanotechnology , metallurgy , composite material , telecommunications , computer science , engineering

Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se) 2 (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230 000 times less solvent and 64 000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research