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The use of CdSe layers has recently emerged as a route to improving CdTe photovoltaics through the formation of a CdTe (1- x ) Se  x  (CST) phase. However, the extent of the Se diffusion and the influence it has on the CdTe grain structure has not been widely investigated. In this study, we used transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD) to investigate the impact of growing CdTe layers on three different window layer structures CdS, CdSe, and CdS/CdSe. We demonstrate that extensive intermixing occurs between CdS, CdSe, and CdTe layers resulting in large voids forming at the front interface, which will degrade device performance. The use of CdS/CdSe bilayer structures leads to the formation of a parasitic CdS (1- x ) Se  x  phase. Following removal of CdS from the cell structure, effective CdTe and CdSe intermixing was achieved. However, the use of sputtered CdSe had limited success in producing Se grading in CST.

Microscopic Analysis of Interdiffusion and Void Formation in CdTe(1–x)Sex and CdTe Layers

Microscopic Analysis of Interdiffusion and Void Formation in CdTe_(1–x)Se_x and CdTe Layers